Sudorgin S.А. The device for measurement of a steepness of low-power field transistors

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Sudorgin Sergey Alexandrovich

Student, Department of Theoretical Physics and Wave Phenomena, Volgograd State University
sergsud@ mail.ru
Prosp. Universitetsky, 100, 400062 Volgograd, Russian Federation

Abstract. In the paper describe of the micro controller device for measurement of a steepness of low-power field transistors. The block diagram, the basic electrical circuit, and the algorithm of job of the device show in the paper. The basic circuit of a power unit of the device and its load-carrying characteristics also is submitted. The results of measurements of a steepness of field transistors of various types are shown in the table.

Key words: field transistors, steepness of transistors, p-channel transistors, n-channel transistors.

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The device for measurement of a steepness of low-power field transistors by Sudorgin S.А. is licensed under a Creative Commons Attribution 4.0 International License.

Citation in English: Science Journal of Volgograd State University. Mathematics. Physics. №1 (14) 2011 pp. 135-138

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